Two-Dimensional Ordering of Ion Damaged Graphite

Post implantation annealing of ion-damaged, highly oriented pyrolytic graphite (HOPG) has been studied by Raman spectroscopy, the ion channeling technique and Transmission Electron Microscopy. Complementary information obtained by these methods provides confirmation for the completion of the first step of graphitization of iondamaged graphite at annealing temperatures of ∼2300°C. This is manifested by the formation of carbon planes with two dimensional ordering but no correlation in the third (c-axis) dimension.