Non-refrigeration infrared detector and preparation method thereof

The invention provides a non-refrigeration infrared detection preparation method. The method comprises the steps of providing a semiconductor substrate with a reading circuit, sequentially depositing a metal reflection layer, an insulating medium layer, a sacrificial layer, a supporting layer, a metal electrode layer, and a silicon nitride medium layer on the semi-conductor substrate, etching away a part of the silicon nitride layer on the metal electrode layer to enable an metal electrode to be exposed and form a contact hole, depositing a temperature-sensitive film on the semiconductor substrate in which the contact hole is formed, conducting imaging processing on the temperature-sensitive film, depositing a silicon nitride passivation layer, and conducting passivation layer imaging and structure releasing. The invention further provides a non-refrigeration infrared detector structure, namely, the temperature-sensitive film covers the metal electrode so as to enable the infrared reflecting rate of the non-refrigeration infrared detector to be greatly reduced, and the infrared absorbing efficiency of the detector is improved.