Integrated silicon photodetector for lab-on-chip sensor platform

In this paper we demonstrate design, fabrication and characterization of both amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) photoconductive detectors integrated on top of passive silicon oxynitride (SiON) circuit. The devices show the best responsivity of 0.5mA/W and 0.8A/W (under broadband illumination in the UV-VIS-NIR spectral region) and dark current of less than 0.23nA and 270nA at the bias of 5V for amorphous and polycrystalline silicon, respectively. The applicability of devices for lab-on-chip biosensor operating at 850nm has been proved by demonstration the ability of the detector to reproduce the sensor spectral response.