Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy

Defects at (sub)surface of dielectric layers as bonding surface are investigated by using positron annihilation spectroscopy. The defect inspection technique unveils the behavior of open spaces in SiCN in each process step. The bonding mechanisms of SiCN-SiCN is discussed with dangling bonds and open spaces obtained by positron annihilation spectroscopy.