A novel cross point one-resistor (0T1R) conductive bridge random access memory (CBRAM) with ultra low set/reset operation current

Using the dual Vth characteristics of a multi-layer SiO 2 /SiO 2 /Cu-GST conducting bridge (CB) structure we can construct a one-resistor cell without an access device (0T1R). Like 1T Flash memory the Vth is used to store the logic state thus leaving all devices always at high resistance state and a separate isolation device is not needed. The Vth of the cell is determined by the presence of CB in the SiO 2 layer only. The CB in the SiO 2 is present only temporarily during reading, and is spontaneously dissolved afterward. This spontaneous rupture of the filament in the SiO 2 layer greatly reduces the switching current as well as reducing the read disturb. The mechanism for the spontaneous rupture phenomenon is investigated.