Особенности тензорезистивного эффекта в структурах металл диэлектрик полупро Водник при статической и переменной деформации

The results of the research into the effects of static and non-uniform deformation on the parameters of metal dielectric semiconductor type structures are given. The mechanism of forming space charge in a semiconductor as we!! as the process of drift of main bearers of charge in the structure with regard for tensoresestive and field effects are considered. The possibility of applying these structure as tensosensitive elements is shown.