High power light emitting diode and light emitting module having the same

The present invention relates to a high power light emitting diode capable of uniformly dispersing a current, and a light emitting module having the same. According to an embodiment of the present invention, the high power light emitting diode comprises: a gallium nitride substrate; a first conductive semiconductor layer disposed on the gallium nitride substrate; a mesa which includes a second conductive semiconductor layer disposed on the first conductive semiconductor layer and an activating layer interposed between the second conductive semiconductor layer and the first conductive semiconductor; a first contact layer which includes an outer contact part which is in contact with the first conductive semiconductor layer along a circumference of the mesa around an edge of the gallium nitride substrate and an inner contact part which is in contact with the first conductive semiconductor layer in an area surrounded by the outer contact part; a second contact layer disposed on the mesa to be in contact with the second conductive semiconductor layer; an upper insulating layer which includes a first opening overlapped with the first contact layer and a second opening overlapped with the second contact layer; a first electrode pad which is electrically in contact with the first contact layer through the first opening; and a second electrode pad which is electrically in contact with the second contact layer through the second opening. The light emitting diode is operated in a current density of greater than or equal to 150 A/cm^2, and the maximum adhesive temperature is greater than or equal to 180C.