Type II GaAsxSb1−x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution

K. D. Moiseev,V. V. Romanov,T. I. Voronina,T. S. Lagunova,M. P. Mikhailova,Yu. P. Yakovlev

Type II GaAsxSb1−x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution

2008

K. D. Moiseev
V. V. Romanov
T. I. Voronina
T. S. Lagunova
M. P. Mikhailova
Yu. P. Yakovlev

Abstract Ternary GaAs x Sb 1− x solid solutions in the composition range 0.05 x x Sb 1− x /InAs heterojunction is a type II broken-gap heterojunction in the composition range x

Keywords:

Ternary operation
Crystallography
Metalorganic vapour phase epitaxy
Heterojunction
Spinodal decomposition
Solid solution
Inorganic chemistry
Chemistry
Band diagram
Epitaxy
Analytical chemistry
Condensed matter physics
Photoluminescence

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