Analysis and optimization of BSF layer for highly efficient GaInP single junction solar cell

Abstract A model of GaInP material based p+/n + junction solar cell was modeled for high photovoltaic characteristic. The back surface field (BSF) layer reduces the recombination velocity and enhances the short circuit current density (Jsc). Using this property, the structure modeled with double BSF layers and enhancement in the Jsc was observed. The lattice matched materials suitable for BSF material was incorporated in the structure and enhancement in the overall efficiency was observed. The simulation result confirms that Jsc is significantly enhanced and open circuit voltage (Voc) almost remains unaffected. The optimized efficiency of 21.59% was achieved using standard AM1.5G spectrum and numerical modeling Silvaco ATLAS TCAD Tool and compared with available models.