62.2: Invited Paper: Bridged‐Grain Polycrystalline Silicon Thin‐Film Transistors

A new structure for thin-film transistors is proposed and demonstrated, exhibiting the benefits but not the drawbacks of both short-channel and multi-junction effects. Simulations are performed to verify the physics of this device structure. All characteristics such as threshold voltage, pseudo subthreshold slope, on-off current ratio and field-effect mobility are improved.