Poly-sic-wafer manufacturing

A polycrystalline SiC wafer manufacturing process is provided. In this method the formed interface is in a modified layer forming step of forming an interface for producing a polycrystalline SiC wafer of a polycrystalline SiC ingot a surface which is formed by joining the modified layers are formed in such a manner that an initial modified layer by dividing polycrystalline SiC is formed in amorphous silicon and amorphous carbon on the optical focal point of a pulse laser beam, and then polycrystalline SiC at a position at which the power density due to absorption of the continuously emitted pulse laser beam is constant through previously formed amorphous carbon, in amorphous silicon and amorphous carbon is divided.