Iridium schottky contact on In0.52Al0.48As

The Schottky barrier properties of Ir on In/sub 0.52/Al/sub 0.48/As have been measured after annealing up to 500/spl deg/C. The barrier height increases to 818 meV for samples annealed at 475/spl deg/C, while that of Pt quickly saturates at 800 meV beyond 200/spl deg/C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.