Properties of A—Sin:H Films Prepared by Glow Discharge of Si 2 H 6 —Nh 3 Gas Mixture

The electrical and optical properties of a-SiNx:H films prepared by the glow discharge of Si2H6-NH3 gas mixture have been investigated in a wide range of the molar ratio of NH3 to Si2H6 The maxima of the dark- and the photo-conductivity are observed at the molar ratio of about 10−1. At this molar ratio the deposition rate is about 33 A/sec. The optical gap and the compositional ratio of nitrogen to silicon change smoothly from those of a-Si:H to those of a-Si3N4. It is found that the valency control is possible in a-SiNx:H films prepared at a high deposition rate.