The Study on the Selectivity Ratio of SiC/Epoxy Resin Based on ICP Etching

SiC molds have excellent performance for high-temperature molding optical lenses. The stable physical and chemical properties of SiC results in the difficulty of manufacture high precision SiC molds. Using etching method can manufacture SiC molds apace and accurately, which is used for Micro-embossing needs to study the suitable selectivity ratio of SiC and the anti-etch layer-epoxy resin. The etching gas is SF6 and O2. Under different ICP power, bias voltage, the gas mixing ratio and other parameters, it has studied the influence of various factors on the etching ratio, the etching rate and the etching quality. Experiments show that under the parameters of SF6 flow of 80sccm, O2 flow of 5sccm, ICP power of 1200w, bias power of 70w, temperature of 30 °C, and pressure of 30mTorr, the SiC etching rate is 246.44nm/min, and the epoxy etching rate is 616nm/min. The SiC/epoxy resin etching ratio is stable at 1:2.5. The roughness of SiC is 1.2nm (Sa= 1.2nm). The anisotropic of etching is good.