Reseach on infrared emissivity for CdZnS semiconductor pigments coating

2010 
The CdZnS semiconductor pigments are prepared by a co-precipition method reaction with Cd(AC)_2,Zn(AC)_2, Na_2S as reagents.The structure,component and the surface morphology of the pigments prepared are characterized by X-ray diffraction,energy dispersive spectra and scanning electron microscope.The influences of sintering temperature and adulterate concentration on the infrared emissivity of the coatings are studied.The results show that the sinter temperature and concentration content are the main influence factors on the infrared emissivity of coatings,and the semiconductor pigment coatings with low infrared emissivity could be obtained by modulating process conditions.
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