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Ledge-Thickness of InGaP Passivation-Layer on InGaP/GaAs Delta-Doped Single HBT's
Ledge-Thickness of InGaP Passivation-Layer on InGaP/GaAs Delta-Doped Single HBT's
1998
Lour
Hsieh
Lia
Keywords:
Optoelectronics
Heterojunction bipolar transistor
Etching (microfabrication)
Doping
Fabrication
Passivation
Gallium arsenide
Degradation (geology)
layer
Materials science
Correction
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