Injection Mesurements and Simulation for a Floating Gate MOSFET Designed for Radiation Measurements
2019
In this paper, a Floating Gate transistor designed and fabricated to be used as a radiation sensor is presented, and the charge injection process through an injection electrode is studied. The device was successfully charged, and the injection process was simulated in a SPICE software, considering that the injection mechanism was Fowler-Nordheim tuneling. The parameters for the Fowler-Nordheim current were found and simulations successfully reproduced the measurements. These simulations will allow to improve the desing and the charge injection setup.
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