Theoretical study of the carrier effective mass in diluted III-N-V semiconductor alloys by using 10-band k.p model

Abstract The dependence of carrier effective mass of GaN x As 1 − x , InN x P 1 − x , InN x As 1 − x , and InN x Sb 1 − x alloys on nitrogen content is investigated using a 10-band k.p model. The electron effective mass m e ⁎ at the bottom of conduction band in GaN x As 1 − x and InN x P 1 − x exhibits a gradual increase as a function of N concentration in the range 0 − 1% and a decrease of x value between 1 and 5%. However, the behavior of m e ⁎ in InN x As 1 − x and InN x Sb 1 − x shows a strong decrease in all studied x-range. Our results are compared to the available data reported in the literature. On the other hand, contrary to heavy-hole effective mass m hh ⁎ , the light-hole effective mass m lh ⁎ in all studied alloys is significantly affected by nitrogen states, which modify the non-parabolicity of the LH band. The modification of the carrier effective mass affects the transport properties of the III-N-V alloys.