Direct modeling of external quantum efficiency of silicon trap detectors

ABSTRACT It is shown the feasibility of direct fitting of external quantum efficiency for silic on trap detectors which are applied as radiometric transfer standards at several National Institutes of Metrology. The model considers the internal quantum efficiency and the reflectance of the detector, whose parameters are fitted in the measured data of external quantum efficiency. The advantage of the suggested approach is the pos sibility of pursuing interpolation of spectral responsivity without loss of physical meaning of the fitted parameters. Keywords: trap detectors, radiometry, quantum efficiency, spectral responsivity 1. INTRODUCTION Measurement of optical power of light, as well as other photometric or radiometric parameters, is of extreme importance for both industrial and research activities. For example, a practical application can be the measurement of light distribution for street luminaries, which can help designers to improve their projects resulting in less light pollution. When one comes across the problem of measuring light over the visible spectral range, silicon detectors are a very frequent choice due to their high performance