USXES AND OPTICAL PHENOMENA IN Si LOW-DIMENSIONAL STRUCTURES DEPENDENT ON MORPHOLOGY AND SILICON OXIDE COMPOSITION ON Si SURFACE

It has been shown that the intensive and broad "red" photoluminescence band in porous silicon is a nonelementary one and could be decomposed on at least three elementary bands. Photoluminescence, ultrasoft X-ray emission spectroscopy, infrared absorption and atomic force microscopy methods were used to study the reasons for both luminescence band appearance in porous silicon photoluminescence spectra, prepared in different technological conditions. The mechanisms of radiative transition for both elementary bands have been discussed as well.