High speed modulation and CW operation of AlGaAs/GaAs lasers on Si
1987
Microwave modulation and CW operation of AlGaAs lasers grown by MBE on Si substrates have been obtained for the first time. Ridge waveguide lasers(10µm×380µm) were modulated with a microwave signal up to 2.5GHz which is notable considering the structure used. Near and far field measurements indicated a single transverse mode and a narrow beam angle (4.8°). Finally, polarization measurements appear to show the solely TE nature of the emission.
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