Single-frequency Sb-based distributed-feedback lasers emitting at 2.3 μm above room temperature for application in tunable diode laser absorption spectroscopy
2006
GaInAsSb/GaAlAsSb/GaSb distributed-feedback (DFB) laser diodes based on a type I active region were fabricated by molecular beam epitaxy at the Centre d'Electronique et de Micro-Optoelectronique de Montpellier (CEM2). The DFB processing was done by Nanoplus Nanosystems and Technologies GmbH. The devices work in the continuous-wave regime above room temperature around an emission wavelength of
2.3 μm with a side-mode suppression ratio greater than
25 dB
and as great as 10 mW of output power. The laser devices are fully characterized in terms of optical and electrical properties. Their tuning properties made them adaptable to tunable diode laser absorption spectroscopy because they exhibit more than
220 GHz of continuous tuning by temperature or current. The direct absorption of
CH4 is demonstrated to be possible with high spectral selectivity.
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