Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure
1997
Thermoelectric power measurements have been carried out for the narrow-band semiconductors p-Bi2Te3 and Te under pressures up to 2.5 GPa at liquid-helium temperatures. The dependences observed correlate with the data obtained by oscillation methods. These correlations allow one to use the thermoelectric power to search for topological electronic transitions in semiconductors.
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