High-K dielectrics for inter-poly application in non volatile memories

Abstract Aim of this work is to investigate the conduction characteristics of different high-K dielectrics deposited by ALD technique. A novel methodology which allows the evaluation of very low leakage current at least two-orders lower than standard I – V characteristics with a reduced 3-masks process flow has been used. A comparison with standard ONO technology is performed and shows that the Al 2 O 3 layer is the most promising candidate for ONO replacement. Different techniques for depositing this layer have been compared investigating the impact of subsequent thermal treatments, which greatly improve Al 2 O 3 performances.