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Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor
Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor
2018
Michael F. MacMillan
Tim Oldham
V Rengarajan
Ping Wu
Keywords:
Composite material
Metallurgy
Silicon carbide
Materials science
Epitaxy
Correction
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