A Novel 3.6kV/400A SiC Intelligent Power Module (IPM)

A novel and cost effective 3.6kV/400A SiC half-bridge IPM is developed based on the Austin SuperMOS [1] concept and reported here for the first time. Twenty-four 1200V SiC MOSFETs are integrated in the IPM together with a high isolation voltage gate power supply, gate driver with overcurrent protection. Ultra-low power loop stray inductance is achieved by utilizing magnetic flux cancellation in the IPM. Static and dynamic performances of the IPM are analyzed experimentally.