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Modification of Drain Current of MOS-FET by the Remanent Magnetization for New Memory
Modification of Drain Current of MOS-FET by the Remanent Magnetization for New Memory
2003
Naoki Wakiya
Satoshi Mizukami
Kan Shimizu
Kazuo Shinozaki
Nobuyasu Mizutani
Keywords:
Remanence
Electronic engineering
Materials science
drain current
Optoelectronics
Correction
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