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Acemap > Paper > 選択再成長オーミックス構造を有するAl2O3/Si3N4薄層絶縁ゲートAlGaN/GaNヘテロ構造FET

選択再成長オーミックス構造を有するAl2O3/Si3N4薄層絶縁ゲートAlGaN/GaNヘテロ構造FET

2005 
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