Today’s scorecard for tomorrow’s photoresist: progress and outlook towards High-NA EUV lithography

As feature sizes continue to shrink, low k1 lithographic processes are required to advance chip technologies. To achieve actual gains in resolution, both the advances in optical systems and imaging capabilities, as well as the improvements in EUV materials and photoresists are key. Researchers today are evaluating the readiness of State-of-the-art materials and processing needed for future applications with 0.33NA exposures at the ASML-imec Advanced Patterning Center, together with studies involving High-NA exposure tools at Lawrence Berkeley National Laboratories and the Paul Scherrer Institute. This talk will give a broad overview of the progress and innovations on high resolution photoresists and patterning processes, and will highlight the key areas of development needed towards high-NA EUV lithography.