InAs N-MOSFETs with record performance of I on = 600 μA/μm at I off = 100 nA/μm (V d = 0.5 V)

Record setting III-V MOSFETs are reported. For the first time performance better than state-of-the-art HEMTs is demonstrated. For a MOSFET with 10 nm unstrained InAs surface channel and L g = 130 nm operating at 0.5 V, on-current as high as I on = 601 μA/μm (at fixed I off = 100 nA/μm) is achieved. This record performance is enabled by g m, ext = 2.72 mS/μm and S = 85 mV/dec, DIBL = 40 mV/V, resulting from breakthroughs in epitaxy and III-V/dielectric interface engineering. Measured mobility is 7100 cm 2 /V.s at n s = 6.7×10 12 cm -2 . Device simulations further elucidate the performance potential of III-V N-MOSFETs.