Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering

The challenges and approaches for high-efficiency InGaN quantum wells (QWs) light-emitting diodes (LEDs) are presented. The studies include designs, growths, and device characteristics of 1) InGaN-based QWs LEDs with enhanced matrix element for realizing green-emitting LEDs with high internal quantum efficiency, and 2) InGaN QW LEDs device structure with lattice-matched AlInN-barrier to suppress efficiency-droop in nitride LEDs. Other approaches to improve the efficiency of the nitride LEDs will be discussed as follow: 1) surface plasmon LEDs, 2) new growth approach for dislocation density reduction in GaN, and 3) novel approaches for light extraction efficiency improvement of III-Nitride LEDs.