Heterostructure acoustic charge transport devices on molecular‐beam epitaxy grown GaAs/(Al,Ga)As epitaxial layers

Molecular‐beam epitaxy (MBE) has been used to grow very high quality layers for the confinement and transport of electrons in heterostructure acoustic charge transport (HACT) devices. In this paper the HACT device concept is reviewed, details of the layer structure and growth techniques are presented, and the performance of transversal filters produced with this material are discussed. It is demonstrated that the MBE growth techniques and epilayer design are adequate to produce charge transport efficiencies in excess of 0.9999 on HACT devices 1 cm (3.3 μs) long with 480 sensing taps. Considerable effort has been made to produce epilayers meeting the extremely demanding requirements of this large area device, and some details of this effort are discussed.