Cubic Silicon Carbite Film Growth and Characterization by Hot Filament Chemical Vapor Deposition

Cubic silicon carbide films (β-SiC) have been successfully grown on monocrystalline silicon wafers by hot filament chemical vapor deposition (HFCVD) at temperatures ranging from 500 to 650°C, fulfilled by a two step process. Raman spectrum of the HFCVD-grown β-SiC films shows a characteristic peak at 975 cm-1 with a full width at half maximum (FWHM) of 76 cm-1. At room temperature, the films emit visible photoluminescence at 580 nm with an FWHM of 0.4 eV. X-ray diffraction and x-ray photoelectron spectroscopy investigations reveal that the epitaxial films are of good quality.