CONVERSION OF TETRAETHOXYSILANE (TEOS) TO SILICA FILM-FORMING PRECURSORS IN ATOMIC OXYGEN-INDUCED CHEMICAL VAPOR DEPOSITION

The gas phase reactions of tetraethoxysilane in atomic oxygen-induced chemical vapor deposition were investigated. A high-resolution gas chromatography/mass spectrometry examination of the reaction products, collected in a cold trap, revealed the presence of linear and cyclic siloxane oligomers containing the -(EtO)2SiO- repeating unit. The structure of the identified oligomers and mechanisms of TEOS reactions with atomic oxygen suggest that diethoxysilanone plays a predominant role in the silica film growth process.