MOVPE deposition of Sb 2 Te 3 and other phases of Sb–Te system on sapphire substrate

Abstract The films of Sb-Te system have been deposited by MOVPE on (0 0 0 1) Al 2 O 3 substrates with thin ZnTe buffer layers at different temperatures and Te/Sb ratios in the vapor phase. X-ray diffractometry, SEM microscopy, Raman and EDX spectroscopy were used to study as-grown films. The surface morphology and stoichiometry of Sb-Te films strongly depend on Te/Sb ratio in vapor phase. We have deposited the phases of homologous series n Sb 2 · m Sb 2 Te 3 with following stoichiometries: Sb 2 Te 3 , Sb 4 Te 5 , Sb 8 Te 9 , Sb 10 Te 9 , Sb 4 Te 3 , Sb 2 Te, Sb 8 Te 3 , Sb 10 Te 3 , Sb 16 Te 3 , Sb 18 Te 3 and Sb. Transport properties of Sb 2 Te 3 , Sb 4 Te 5 , Sb 8 Te 9 , Sb 4 Te 3 , Sb 2 Te were evaluated using Van der Pauw technique at 300 K.