Enhancement of QDs' fluorescence based on porous silicon Bragg mirror

Abstract We fabricated a new porous silicon photonic device which is a special multi-layer porous silicon including two different single layer porous silicon and a porous silicon Bragg mirror, and investigated the influence of porous silicon Bragg mirror's structure on the fluorescence intensity of quantum dots (QDs) which infiltrated into porous silicon device, and CdSe/ZnS QDs we used emit at 605 nm and 625 nm respectively. By immersing porous silicon samples in QDs solution, QDs were successfully infiltrated into porous silicon devices which have high reflection band at or beyond fluorescence peak. Experimental results show that the fluorescence intensity of QDs which infiltrated into the first layer of porous silicon device can be enhanced when fluorescence peak falls into the high reflection band of porous silicon device.