Old Web
English
Sign In
Acemap
>
Paper
>
Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
2017
Nabeel Aslam
Regina Dittmann
Georg Roth
Keywords:
Ternary operation
Oxide
Thin film
Materials science
Resistive touchscreen
Inorganic chemistry
resistive switching memory
Binary number
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]