High-power broad-band superluminescent diode using selective area growth at 1.5-μm wavelength
2007
Superluminescent diode with selectively grown multi-quantum-well layer was demonstrated. This light source consists of angled facet single-mode waveguide with a rear absorption region. High output power(77-mW), wide spectral bandwidth(71-nm FWHM), and a very small spectral modulation (0.7-dB) were achieved with a short absorption region length.
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