Experimental investigation of the variation of the absorption coefficient with nitrogen content in GaAsN and GaInAsN grown on GaAs (001)

We have measured the absorption coefficient at the fundamental band edge in Ga1−yInyAs1−xNx and GaAs1−xNx alloys. In contrast to what is observed in most III-V semiconductors, the absorption coefficient of Ga(In)AsN increases when the band gap energy decreases. In the Ga1−yInyAs1−xNx alloys, the absorption coefficient at threshold saturates near x=0.009, whereas the absorption coefficient of the GaAs1−xNx layers shows no sign of saturation for 0

Keywords:

• Fermi surface
• Attenuation coefficient
• Band gap
• Condensed matter physics
• Gallium arsenide
• Effective mass (solid-state physics)
• Extended X-ray absorption fine structure
• Semiconductor
• Saturation (chemistry)
• Physics
• Analytical chemistry
• Alloy

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