Structure, dielectric properties and energy storage performance of barium strontium titanate thin films prepared by spin-coating technique

Ba 0.4 Sr 0.6 TiO 3 (BST) thin films were prepared by spin-coating technique and deposited on either Pt/TiO 2 /SiO 2 /Si (Pt/Si) substrate or silicon buffered by a lanthanum nickel oxide buffer layer (LNO/Si). X-ray diffraction and scanning electron microscopy showed that the BST films were crack free, compact and crystallized with a single perovskite structure. The effects of bottom electrodes on dielectric properties and energy storage performance of BST films were investigated. The results shows that the dielectric constant of BST/Pt film is a little higher than that of BST/LNO film, and the dielectric loss at 1 kHz of both films is very low, −9 A/cm 2 and ∼1.0×10 −8 A/cm 2 for BST/LNO and BST/Pt films, respectively. The P-E loops and energy storage performance of both films are similar. It was indicated that BST/LNO thin film can be applied as a cost-effective and environment-friendly capacitor for high-power energy storage.