Temperature effects in m.o.s. transistors
1966
The effects of temperature on m.o.s. transistors, operated in the pinchoff mode under constant-current conditions, are examined. A theoretical derivation, which accounts for interface and substrate conditions, is presented for the temperature coefficient of the gate-source voltage. Experimental measurements on both n- and pchannel silicon m.o.s. transistors are compared with theory.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
5
References
24
Citations
NaN
KQI