Stretchable Semiconductor Technologies with High Areal Coverages and Strain‐Limiting Behavior: Demonstration in High‐Efficiency Dual‐Junction GaInP/GaAs Photovoltaics

: Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These designs allow for a high degree of stretchability and areal coverage, and they provide a natural form of strain-limiting behavior, helping to avoid destructive effects of extreme deformations.