Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing
2014
A germanium n
+
/p shallow junction formed by a combination of low-temperature preannealing (LTPA) and excimer laser annealing at a low fluence of 150 mJ/cm
2
for phosphorus-implanted germanium is demonstrated. The LTPA step plays a critical role in annihilating the implantation damages and significantly suppressing phosphorus diffusion during laser annealing process, resulting in a very small dopant diffusion length with high activation level of phosphorus. A well-behaved Ge n
+
/p shallow junction diode with a record rectification ratio of ~10
7
and low leakage current density of 8.3 × 10
-5
A/cm
2
is achieved, which is greatly beneficial to the scaled Ge MOSFET technology.
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