Defect Related Leakage Current Components in SiC Schottky Barrier Diode

SiC Schottky barrier diodes were fabricated and measured properties were characterized by device simulation. Most of devices show low leakage current, however, a few devices show leakage current larger than the values estimated from deviation of drift layer parameters. The leakage current component remarkable in lower voltage and saturating at higher voltage is related to Schottky barrier tunneling at macroscopic defects. The component remarkable in higher voltage is considered to be due to microscopic defect related generation current, concerning with non-stoichiometry.