SOI TFT's with directly contacted ITO
1986
N-channel Al-gate thin-film transistors (TFT's) were fabricated on a silicon on insulator (SOI). Indium tin oxide (ITO) was deposited directly on the n+ silicon layer of the TFT. The contact resistance between the ITO and the n+ silicon layer increases with thermal annealing. The low temperature (200°C) lift-off method of ITO is applied to achieve high-quality TFT's for active matrices in liquid crystal displays (LCD's).
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