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Oxide isolated ion-implanted bipolar transistors for high packing density and low power-delay product
Oxide isolated ion-implanted bipolar transistors for high packing density and low power-delay product
1973
W.J. Evans
A. R. Tretola
R.S. Payne
M. L. Olmstead
D. Speeney
Keywords:
Logic gate
Electronic engineering
NMOS logic
Integrated injection logic
Computer science
Bipolar junction transistor
Resistor–transistor logic
Heterostructure-emitter bipolar transistor
Current injection technique
PMOS logic
Power–delay product
Oxide
Correction
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