Half-threshold bias I off reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

We report on the reduction of leakage current at half threshold bias (I off1/2 ) down to the 1nA range achieved using Se-enriched or N-doped GeSe. Integrated 50nm OTS devices demonstrated excellent thermal stability up to 600°C, as well as electrical stability (V th , I off1/2 ) when operated at a high on current density of 23MA/cm 2 for 10 8 cycles.