Effect of vanadium on the room temperature ferromagnetism of V-doped 6H—SiC powder

This study focuses on the effect of V-doping on the ferromagnetism (FM) of 6H—SiC powder. The X-ray diffraction results indicate that V is inserted into the 6H—SiC lattice. The Raman spectra reveal that with a V concentration of 25 ppm, the crystalline quality and carrier concentration of 6H—SiC are hardly varied. It is found that after the V-doping process, the saturation magnetization (Ms) and the vacancy concentration of 6H—SiC are both increased. From these results, it is deduced that the effect of V might contribute mainly to the increase of vacancy concentration, thus resulting in the increase of Ms of V-doped 6H—SiC.