III-V material channel film transistor with SOI inter-digital substrate, and preparing method

The invention provides a III-V material channel film transistor with an SOI inter-digital substrate, and a preparing method. The III-V material channel film transistor with the SOI inter-digital substrate is characterized in that the III-V material channel film transistor comprises the SOI substrate, wherein one side on top silicon of the SOI substrate is provided with a source region, the other side is a drain region, and the middle part is provided with inter-digital silicon submicron wires; the surfaces of the source region and the drain region are respectively provided with an insulating dielectric layer, and the insulating dielectric layers on the source region and the drain region are respectively provided with an electrode window; a III-V material film is arranged on the inter-digital silicon submicron wires; a gate dielectric layer is arranged on the surface of the III-V material film; a source electrode is arranged in the electrode window of the source region, and the source electrode is in contact with the top silicon of the SOI substrate; a drain electrode is arranged in the electrode window of the drain region, and the drain electrode is in contact with the top silicon of the SOI substrate; and gate electrode is arranged on the gate dielectric layer. According to the invention, the preparation of the plane film transistor is realized.