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GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal
2021
Idriss Abid
E. Canato
Matteo Meneghini
Gaudenzio Meneghesso
Kai Cheng
Farid Medjdoub
Keywords:
Substrate (chemistry)
Materials science
Voltage
Optoelectronics
Silicon
Transistor
Correction
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